IRF840 Datasheet, PDF, Circuit Diagram, Application Notes

IRF840 Application,Package,Pin

Application : 500 V, Power MOS transistor avalanche energy rated

Manufacturer : Philips

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Application : HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A

Manufacturer : IR

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Application : 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

Manufacturer : Intersil

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Application : N-channel HEXFET, 500V, 8A

Manufacturer : Motorola

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Application : N-channel HEXFET, 500V, 8A

Manufacturer : Samsung

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Application : N-CHANNEL 500V - 0.75 OHM - 8A - TO-220 POWERMESH MOSFET

Manufacturer : ST-Microelectronics

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Application : N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

Manufacturer : Motorola, Inc

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Datasheet PDF

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Application : PowerMOS transistor Avalanche energy rated

Manufacturer : Philips Semiconductors

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Datasheet PDF

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Application : N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET

Manufacturer : STMicroelectronics

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Datasheet PDF

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Application : N-CHANNEL POWER MOSFETS

Manufacturer : Samsung semiconductor

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Datasheet PDF

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Application : 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

Manufacturer : Intersil Corporation

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Datasheet PDF

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Application : Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Manufacturer : International Rectifier

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Datasheet PDF

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Application : TRANSISTORS N-CHANNEL

Manufacturer : International Rectifier

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Datasheet PDF

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Application : N-Channel Power MOSFETs, 8A, 450 V/500V

Manufacturer : Fairchild Semiconductor

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Datasheet PDF

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Application : 500V N-Channel MOSFET

Manufacturer : Fairchild Semiconductor

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Datasheet PDF

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