IRG4BC10SD Datasheet, PDF, Circuit Diagram, Application Notes

IRG4BC10SD Application,Package,Pin

Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A

Manufacturer : IR

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Application : TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB

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Datasheet PDF

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Application : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Manufacturer : International Rectifier

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