IRG4BC10SD-L Datasheet, PDF, Circuit Diagram, Application Notes

IRG4BC10SD-L Application,Package,Pin

Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A

Manufacturer : IR

Package :

Pin :

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Application : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Manufacturer : IRF[International Rectifier]

Package :

Pin :

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Application : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

Manufacturer : International Rectifier

Package :

Pin :

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