Electronics Parts Number List P
- 28C010TRT2FE12 Maxwell
1 megabit (128K x 8-bit) - EEPROM - PRC210150/470M CMD
EMI/RFIT-filter - GB301YG-AC220-TF-B GCC
Relay. Coil voltage 220 VAC. Contact arrangement SPST-NC-DB. Contact material gold finish. Cover top flang. Option test button. - P87C750PFPN Philips
80C51 8-bit microcontroller family 1K/64 OTP ROM, low pin count - CAT93C6612PI-25TE13 Catalyst
4K 2.55-2.7V Supervisory circuit with microwire serial CMOS EEPROM, precision reset controller and watchdog timer - T10C110BF Littelfuse
T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 100V,max. Vbr = 110V,min @ 1uA, Holding carrent Ih = 120mA,th min. - M38002E4DXXXFP Mitsubishi
Single-chip 8-bit microcfomputer. One time PROM version. PROM 16384 bytes, RAM 384 bytes - AS2431CR4D7 Astec
Precision adjustable shunt reference - LC3517AM-12 SANYO
120ns, 2048-word x 8-bit CMOS static RAM (SRAM) - T700083004BY Powerex
800V, 300A phase control single thyristor - G17CSNIL-DC24 GCC
Relay. Nominal voltage 24VDC. Resistance(+-10%) 520W. Contact material AgNi. Contact arrangement 1 form C. Sealed. - KM416V1204CTL-60 Samsung
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh - CAT25C021SA-17TE13 Catalyst
2K 1.7-1.8V Supervisory circuits with SPI serial EEPROM, precision reset controller and watchdog timer - 5962-9656501QXX UTMC
RadHard MSI SMD. Synchronous 4-bit up-down binary counter. Class Q, QML. Lead finish optional. Total dose none. - M6MBT166S4BWG Mitsubishi
CMOS 3.3V only flash memory - FKC05-48S12W P-DUKE
Input range18-75 VDC;output voltage12 VDC; output current470 mA;input current155 mA; 5 W DC-DC converter - WS512K32-17G1UI White-Electronic
17ns; 5V power supply - 3.3V parts also available; 512K x 32 SRAM module, SMD 5962-94611 - MM74HC123AMX Fairchild
Dual Retriggerable Monostable Multivibrator - OR2T40B-4BA352I Agere
ORCA feild-programmable gate array. Voltage 3.3 V. - IDT54FCT240TD IDT
Fast smos octal buffer/line driver - SST29LE020-150-4C-EH SST
2 Mbit (256K x 8) page-mode EEPROM - 5962L0053604QXX UTMC
512K x 8 SRAM MCM SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). - S-80816ALNP-EAD-T2 Epson
Low-voltage high-precision voltage detector - PDM4M4060S12AM Paradigm-Technology
256K x 32 CMOS static RAM module - QL3060-4PQ208M QuickLogic
60,000 usable PLD gate pASIC 3 FPGA combining high performance and high density. - 5962G0153701QXA UTMC
LVDS crosspoint switchSMD. QML class Q. Total dose 5E5 rad(Si). Lead finish hot solder dipped. - DLV-3.3/6-1.8/7-D24I Datel
3.3V and 1.8V 30W Dual output mixed voltageDC/DC converter - LM2673SX-5.0 National Semiconductor
SIMPLE SWITCHER 3A Step-Down Voltage Regulator with Adjustable Current Limit - M38258MEMXXXFS Mitsubishi
RAM size 1536 bytes; single-chip 8-bit CMOS microcomputer - L53BT12.7/SGD Kingbright
T-1 3/4(5mm) variable hight LED board indicator. Super bright green. Lens type green diffused. - P4C198AL-10PC Performance-Semiconductor
10 ns,static CMOS RAM, 16 K x 4 ultra high speed - R3112N20A-TR Ricoh
Low voltage detector with output delay. Output voltage 2.0V. Output type Nch open drain. Standard taping type TR. - IDT79R3081E25PF IDT
RIScontroller with FPA - MSM514100DL-50SJ OKI
4,194,304-word x 1-bit dynamic RAM - K4E640812B-JCL-6 Samsung
8M x 8bit CMOS dynamic RAM with extended data out, 60ns - SST39SF040A-45-4C-PH SST
Multi-purpose flash - TMS44400PDGA-70 Texas Instruments
1048576-word by 4-bit dynamic random-access memories, 70 ns, 5V, self-refresh - 5962F9322603VZA UTMC
Monolithic transceiver, 5V operation SMD. Device type idle low. Class V. Lead finish solder. Total dose 3E5 rads(Si).
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